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Indium Tin Oxide
In2O3:SnO2
Identifiers
Formula: In2O3:SnO2
Item #: IN-2310
CAS #: 50926-11-9
EC / List #: 610-589-1
Synonyms: ITO
Market Focus: Refractory Oxides, Electro-Conductive Powders, High Purity Thin Film Coating
Other Applications:

ITO has high electrical conductivity and optical transparency, making it useful in thin-film applications for flat-panel displays, windows, polymer-based electronics or thin-film photovoltaics. Thin-films of ITO can also be used in light-emitting diodes (as an anode), antistatic coatings, infrared-reflecting coatings, and electro-magnetic interference shielding.

Notes

ITO is a doped n-type semiconductor with a large bandgap of around 4 eV. It is mostly transparent in the visible part of the spectrum.

Indium tin oxide is a custom synthesized material available in commercial quantities in powder, nano-powder and tablet form.  The powder is available in customized compositions, In2O3:SnO2 = 90:10 , 95:5 or as required by the customer.

Lorad scientists have developed a proprietary method of sintering ITO compositions to very high densities.  At this time, small sintered discs can be made available.

Properties
Purity: 99.99
Form:

Available as a powder or a nano-powder. Also available as tablets - In:Sn=90:10 (Customized Ratios).

Density: 1.20 g/cm³
Optical Properties
Refractive Index: 2 at 500nm
Transmission Range: 400 - 1000nm
Evaporation Temperature: ~600ºC
Evaporation Source: e-beam
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IN-2310